| CAS: | 27804-64-4 | |
| 分子式: | C8H22N2Si | |
| 分子量: | 174.36 | |
| 沸点: | 70 °C at 30 mmHg | |
| 中文名称: |
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| 英文名称: |
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| 货号 | 品牌 | 产品名称 | 规格 | 包装、参考价格 | |||
| 779545 | MACKLIN | 双(二乙氨基)硅烷 | 90% | 549元/1g; 2199元/5g; | 咨询 | ||
储存：室温, 密封, 干燥 | |||||||
| 14-7030 | Strem | Bis(diethylamino)silane | 97% | 1890元/5g; 7575元/25g; | 咨询 | ||
Technical Notes: 1.Plasma-Assisted ALD for the Conformal Deposition of SiO2 Room-Temperature ALD of Metal Oxide Thin Films by Energy- Enhanced AL D 2.Atomic L ayer Deposition of Silica on Carbon Nanotubes 3.Area-Selective Atomic L ayer Deposition of SiO2 Using Acetylacetone as a Chemoselective Inhibitor in an ABC-Type Cycle References: 1.J. Electrochem. Soc., 2012, 159, H277. 2.Chem. Vap. Deposition, 2013, 19, 125. 3.Chem. Mater., 2017, 29, 4920. 4.ACS Nano, 2017, 11, 9303. | |||||||
| 98-8810 | Strem | Bis(diethylamino)silane | 99% (99.999%-Si) | 2745元/5g; 10935元/25g; | 咨询 | ||
Technical Notes: 1.AL D/CVD precursor for Si thin films References: 1.J. Electrochem. Soc. 2008, 155, G163 2.ECS Transactions, 2011, 35, 191 3.J. Electrochem. Soc 2012. 159, H277 4.Chem. Vap. Deposition 2013 19, 125 5.IEEE Electron Device L ett. 2010, 31, 857 6.J. Vac. Sci. Technol. A, 2015, 33, 01A137 7.C hem. Mater. 2017.29, 4920 8.Plasma Process Polym. 2019, 16, 1 900032 9.Nanotechnology.2021 32. 075706 10.J. Vac. Sci. Technol. A. 2016, 34, 01A136 | |||||||
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