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CAS: 25617-97-4
分子式: GaN
分子量: 83.73
熔点: 800℃
中文名称: 
氮化镓
英文名称: 
gallium nitride
gallium mononitride
gallium nitride (gan)
gallium(iii) nitride
galliumnitride
推荐供应商
货号品牌产品名称规格包装、参考价格详情
G888740MACKLIN氮化镓(III)99.9999% metals basis1150元/5g;   4446元/25g;  
储存:室温, 干燥, 充氩保存
状态:黄色到棕褐色到暗灰色粉末
G810665MACKLIN氮化镓99.99% metals basis134元/1g;   428元/5g;   728元/10g;   1784元/25g;   6200元/100g;  
储存:室温, 干燥, 充氩保存
状态:黄色到棕褐色粉末
040218Alfa AesarGallium(III) nitride99.99% (metals basis)3112元/10g;   16328元/50g;   0元/250g;  

应用
Gallium(III) nitride is used to read blu-ray discs. It is used in various wireless infrastructure applications. It finds applications in optoelectronic, high-power and high-frequency devices. It is also useful in military electronics (active electronically scanned array radars). It is biocompatible and used in electrodes and electronic components in living organisms. It is a suitable material for solar cell arrays for satellites. It is employed in bright light-emitting diodes.

备注
Water and moisture sensitive. It forms ammonia when contacted with water or humid air. Incompatible with stong oxidizing agents.

基本信息

MDL
MFCD00016108

EINECS
247-129-0

分子式
GaN

分子量
83.73

熔点
800° subl.

密度
6.1

灵敏度
Moisture Sensitive. Store under Nitrogen. Ambient temperatures.

形态
Powder

溶解性
Slightly soluble in hot concentrated sulfuric acid and hot conc. sodium hydroxide. Insoluble in water and dilute acids.

Merck
14,4351

GHS危害和防范说明

GHS符号

Hazard Statements
H317
May cause an allergic skin reaction.

Precautionary Statements
P261-P280g-P321-P333+P313-P302+P352a-P501a
Avoid breathing dust/fume/gas/mist/vapours/spray.Wear protective gloves.Specific treatment (see label).If skin irritation or rash occurs: Get medical advice/attention.If skin irritation or rash occurs: Get medical advice/attention.Dispose of contents/container in accordance with local/regional/national/international regulations.

安全信息

危险类别
43
May cause sensitization by skin contact.

安全等级
24-37
Avoid contact with skin.

TSCA

481769Sigma-AldrichGallium nitride99.9% trace metals basis2353.41元/10 G;   8060.57元/50 G;  

产品说明

应用

氮化镓(GaN)是一种宽带隙半导体材料,可用于各种电子器件的开发,如发光二极管(LED)和场效应晶体管(FET)。它还可用作基于自旋电子学应用的过渡金属掺杂剂。

包装

10, 50 g in glass bottle

基本信息

线性分子式GaN
分子量83.73
EC 号247-129-0
MDL编号MFCD00016108
PubChem化学物质编号24871779
NACRESNA.23

产品性质

质量水平100
测定99.9% trace metals basis
形式powder
mp800 ℃ (lit.)
SMILES stringN#[Ga]
InChI1S/Ga.N
InChI keyJMASRVWKEDWRBT-UHFFFAOYSA-N

安全信息

象形图GHS07
警示用语:Warning
危险声明H317
预防措施声明P280
危险分类Skin Sens. 1
储存分类代码13 - Non Combustible Solids
WGKWGK 3
闪点(F)Not applicable
闪点(C)Not applicable
个人防护装备Eyeshields, Faceshields, Gloves, type N95 (US)
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