CAS 1314-61-0; 氧化钽; tantalumoxide

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T818922

MACKLIN

氧化钽(V)

99.5%

46元/5g; 195元/25g; 594元/100g; 2504元/500g;

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储存：室温
状态：白色到灰白色粉末或晶体

T818921

MACKLIN

氧化钽(V)

99.99% metals basis,用于光学玻璃或单晶

65元/5g; 216元/25g; 698元/100g; 3056元/500g; 12888元/2.5kg;

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储存：室温
状态：白色粉末

T758874

MACKLIN

氧化钽(V)

99.99% trace metals basis, D50=2~3μm

270元/25g; 910元/100g; 3998元/500g;

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储存：室温, 密封

V767372

MACKLIN

氧化钽(V)

99.99% metals basis, 用于镀膜

256元/25g; 799元/100g;

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储存：室温
状态：固体

V767373

MACKLIN

氧化钽(V)

99.99% trace metals basis,<20 μm,

235元/25g; 715元/100g; 3500元/500g;

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储存：室温
状态：固体

T766939

MACKLIN

氧化钽(V)

99.995% metals basis,≤80目

3000元/25g; 7300元/100g;

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储存：室温
状态：白色或灰白色粉末或晶体

T766940

MACKLIN

氧化钽(V)

99.95% metals basis, ≤80目

220元/25g; 668元/100g; 3189元/500g;

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储存：室温
状态：白色到灰白色固体

V768558

MACKLIN

氧化钽(V)

99% trace metals basis

175元/25g; 520元/100g;

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储存：室温
状态：固体

73-2000

Strem

Tantalum(V) oxide

99.8% (99.95+%-Ta)

1095元/25g; 4410元/100g;

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93-7306

Strem

Tantalum(V) oxide

99.8% (99.99+%-Ta) PURATREM

615元/10g; 2535元/50g;

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014709

Alfa Aesar

Tantalum(V) oxide

99% (metals basis)

600元/10g; 2355元/50g; 6832元/250g;

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应用
Tantalum(V) oxide is used in the production of capacitors, due to its high dielectric constant. These capacitors are used in automotive electronics, cell phones, thin film components and electronic circuitry. In addition, Tantalum(V) oxide has been utilized in the fabrication of the glass of photographic lenses. Due to its high biocompatibility and resistivity, it has attracted many biomedical applications. It is used in tantalum capacitors, resistive switching memories, high frequency CMOS (Complementary metal-oxide-semiconductors) integrated circuits and high-k dielectric for DRAM (Dynamic random-access memory) capacitor applications. It has been shown to improve corrosion resistance and cytocompatibility of titanium substrates.

备注
Tantalum(V) oxide reacts with strong bases and hydrofluoric acid.

基本信息

MDL
MFCD00011254

EINECS
215-238-2

分子式
Ta₂O₅

分子量
441.89

熔点
1800°

密度
8.2

灵敏度
Ambient temperatures.

形态
Powder

溶解性
Insoluble in water, alcohol, mineral acids. Soluble in HFInsoluble in almost all organic solvents including alcohol and mineral acids. Solubility is negligible in water. Soluble in HF

Merck
14,9056

安全信息

TSCA
是

073118

Alfa Aesar

Tantalum(V) oxide

Spectrographic Grade, 99.5% (metals basis)

2285元/25g; 4327元/100g;

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应用
Tantalum(V) oxide is used in the production of capacitors, due to its high dielectric constant. These capacitors are used in automotive electronics, cell phones, thin film components, and electronic circuitry. In addition, tantalum(V) oxide has been utilized in the fabrication of the glass of photographic lenses. Due to its high biocompatibility and resistivity, it has attracted many biomedical applications. It is used in tantalum capacitors, resistive switching memories, high frequency CMOS (Complementary metal-oxide-semiconductors) integrated circuits, and high-k dielectric for DRAM (Dynamic random-access memory) capacitor applications. It has been shown to improve corrosion resistance and cytocompatibility of titanium substrates.

备注
Tantalum(V) oxide reacts with strong bases and hydrofluoric acid.

基本信息

MDL
MFCD00011254

EINECS
215-238-2

分子式
Ta₂O₅

分子量
441.89

熔点
1800°

密度
8.2

灵敏度
Ambient temperatures.

形态
Powder

溶解性
Insoluble in almost all organic solvents. Solubility is negligible in water.

Merck
14,9056

安全信息

TSCA
是

011336

Alfa Aesar

Tantalum(V) oxide

99.85% (metals basis)

1121元/25g; 2934元/100g; 12886元/500g;

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备注
Tantalum(V) oxide reacts with strong bases and hydrofluoric acid.

基本信息

MDL
MFCD00011254

EINECS
215-238-2

分子式
Ta₂O₅

分子量
441.89

熔点
1800°

密度
8.2

灵敏度
Ambient temperatures.

形态
-325 Mesh Powder

溶解性
Insoluble in almost all organic solvents. Solubility is negligible in water.

Merck
14,9056

安全信息

TSCA
是

036343

Alfa Aesar

Tantalum(V) oxide

99.95% (metals basis excluding Nb), Nb <200ppm

2866元/25g; 8606元/100g;

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应用
Tantalum (V) oxide (Ta2O5) has potential applications as part of an environmental barrier coating system for Si3N4-based turbine components. Octadecyl phosphoric acid ester has been found to produce oriented, well-ordered monolayers on a flat tantalum (V) oxide surface, via self-assembly from a heptane/propan-2-ol solution. Tantalum(V) oxide (Ta 2 O 5 ) has been used extensively as an insulating layer in discrete capacitors and shows a high potential for semiconductor applications such as an insulating dielectric in the capacitive element in memory devices such as dynamic random access.

备注
For vacuum deposition

基本信息

MDL
MFCD00011254

EINECS
215-238-2

分子式
Ta₂O₅

分子量
441.89

熔点
1800°

密度
8.2

灵敏度
Ambient temperatures.

形态
3-12mm Sintered Lump

溶解性
Insoluble in water.

Merck
14,9056

安全信息

TSCA
是

010881

Alfa Aesar

Tantalum(V) oxide

Puratronic庐, 99.993% (metals basis excluding Nb), Nb 50ppm max

4973元/25g; 10919元/100g; 0元/500g;

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应用
It is used in the production of capacitors, due to its high dielectric constant. These capacitors are used in automotive electronics, cell phones, thin film components, and electronic circuitry. In addition, Tantalum(V) oxide has been utilized in the fabrication of the glass of photographic lenses. Due to its high biocompatibility and resistivity, it has attracted many biomedical applications. It is used in tantalum capacitors, resistive switching memories, high frequency CMOS (Complementary metal-oxide-semiconductors) integrated circuits, and high-k dielectric for DRAM (Dynamic random-access memory) capacitor applications. It has been shown to improve corrosion resistance and cytocompatibility of titanium substrates.

备注
Tantalum(V) oxide reacts with strong bases and hydrofluoric acid.

基本信息

MDL
MFCD00011254

EINECS
215-238-2

分子式
Ta₂O₅

分子量
441.89

熔点
1800°

密度
8.2

灵敏度
Ambient temperatures.

形态
Powder

溶解性
Insoluble in almost all organic solvents. Solubility is negligible in water.

Merck
14,9056

安全信息

RTECS
WW5855000

TSCA
是

C19417

Alfa Aesar

Tantalum(V) oxide

99.99%, (trace metal basis)

1178元/10g; 4207元/50g;

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基本信息

Ref#
19417

MDL
11254

分子式
O5 Ta2

分子量
441.89

形态
Powder

R40081

Alfa Aesar

Tantalum(V) oxide

puratronic庐, 99.993% (metals basis excluding Nb), Nb 50ppm max

6496元/10mg; 11692元/25mg; 28147元/100mg;

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基本信息

MDL
MFCD00011254

EINECS
215-238-2

分子式
Ta{2}O{5}

分子量
441.89

熔点
1800°

密度
8.2

形态
Powder

安全信息

RTECS
WW5855000

TSCA
是

757373

Sigma-Aldrich

Tantalum(V) oxide

tablet, deposition grade, 99.99% trace metals basis

482.56元/1 EA;

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基本信息

线性分子式	Ta₂O₅
分子量	441.89
EC 号	215-238-2
MDL编号	MFCD00011254
PubChem化学物质编号	329766668
NACRES	NA.23

产品性质

等级	deposition grade
质量水平	100
测定	99.99% trace metals basis
形式	tablet
密度	8.2 g/mL at 25 ℃ (lit.)
SMILES string	O=[Ta](=O)O[Ta](=O)=O
InChI	1S/5O.2Ta
InChI key	PBCFLUZVCVVTBY-UHFFFAOYSA-N

安全信息

储存分类代码	13 - Non Combustible Solids
WGK	WGK 3
闪点(F)	Not applicable
闪点(C)	Not applicable

204536

Sigma-Aldrich

Tantalum(V) oxide

<20 μm, 99.99% trace metals basis

947.25元/10 G; 2958.71元/50 G;

咨询

基本信息

线性分子式	Ta₂O₅
分子量	441.89
EC 号	215-238-2
MDL编号	MFCD00011254
eCl@ss	38180602
PubChem化学物质编号	24852274
NACRES	NA.23

产品性质

质量水平	100
测定	99.99% trace metals basis
形式	powder
reaction suitability	reagent type: catalyst core: tantalum
粒径	<20 μm
密度	8.2 g/mL at 25 ℃ (lit.)
application(s)	battery manufacturing
SMILES string	O=[Ta](=O)O[Ta](=O)=O
InChI	1S/5O.2Ta
InChI key	PBCFLUZVCVVTBY-UHFFFAOYSA-N

安全信息

储存分类代码	13 - Non Combustible Solids
WGK	nwg
闪点(F)	Not applicable
闪点(C)	Not applicable
个人防护装备	Eyeshields, Gloves, type N95 (US)

303518

Sigma-Aldrich

Tantalum(V) oxide

99% trace metals basis

860.55元/25 G; 3037.2元/100 G;

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产品说明

一般描述

五氧化二钽本质上是一种电介质，因此可用在电子工业中制造电容器。

应用

氧化钽与栅极介电结构中的硅混合。它可用于合成六方填充的介孔氧化钽分子筛。研究表明，氧化钽薄膜的离子束溅射沉积可能应用于光学涂层。它可用于制造透镜和电子电路的光学玻璃。

包装

100 g in poly bottle
25 g in glass bottle

基本信息

线性分子式	Ta₂O₅
分子量	441.89
EC 号	215-238-2
MDL编号	MFCD00011254
PubChem化学物质编号	24858127
NACRES	NA.23

产品性质

质量水平	100
测定	99% trace metals basis
形式	powder
reaction suitability	reagent type: catalyst core: tantalum
密度	8.2 g/mL at 25 ℃ (lit.)
application(s)	battery manufacturing
SMILES string	O=[Ta](=O)O[Ta](=O)=O
InChI	1S/5O.2Ta
InChI key	PBCFLUZVCVVTBY-UHFFFAOYSA-N

安全信息

储存分类代码	13 - Non Combustible Solids
WGK	nwg
闪点(F)	Not applicable
闪点(C)	Not applicable
个人防护装备	Eyeshields, Gloves, type N95 (US)

697222

Sigma-Aldrich

Tantalum(V) oxide

−60 mesh, 99.5%

1244.4元/25 G;

咨询

基本信息

线性分子式	Ta₂O₅
分子量	441.89
EC 号	215-238-2
MDL编号	MFCD00011254
PubChem化学物质编号	329761900
NACRES	NA.23

产品性质

质量水平	100
测定	99.5%
粒径	−60 mesh
密度	8.2 g/mL at 25 ℃ (lit.)
application(s)	battery manufacturing
SMILES string	O=[Ta](=O)O[Ta](=O)=O
InChI	1S/5O.2Ta
InChI key	PBCFLUZVCVVTBY-UHFFFAOYSA-N

安全信息

储存分类代码	13 - Non Combustible Solids
WGK	WGK 3
闪点(F)	Not applicable
闪点(C)	Not applicable
个人防护装备	Eyeshields, Gloves, type N95 (US)