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CAS: 12063-98-8
分子式: GaP
分子量: 100.7
熔点: 1480 °C
英文名称: 
gallium phosphide
gallium monophosphide
gallium phosphide (gap)
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G888767MACKLIN磷化镓99.999% metals basis264元/1g;   814元/5g;   咨询
储存:室温
状态:橙色固体
G810666MACKLIN磷化镓99.99% metals basis466元/2g;   1350元/10g;   5234元/50g;   咨询
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93-3123StremGallium phosphide(99.999%-Ga) PURATREM2613元/2g;   10482元/10g;   咨询
012266Alfa AesarGallium phosphide99.999% (metals basis)1349元/2g;   5705元/10g;   35826元/50g;   咨询

应用
Gallium phosphide (GaP) is used in semiconductor devices, and in the manufacture of light-emitting diodes (LEDs) doped with other elements or in combination with gallium arsenide phosphide. With appropriate dopants, p-type and n-type semiconductors can be produced. It is used in optical systems.

备注
Stable. Its life is relatively short at a higher current. It is sensitive to temperature.

基本信息

MDL
MFCD00016109

EINECS
235-057-2

分子式
GaP

分子量
100.69

熔点
1465°

密度
4.13

灵敏度
Ambient temperatures.

形态
6mm & Down Pieces

溶解性
Insoluble in water.

Merck
14,4353

GHS危害和防范说明

GHS符号

Hazard Statements
H319-H335
Causes serious eye irritation.May cause respiratory irritation.

Precautionary Statements
P261-P280i-P305+P351+P338-P304+P340-P405-P501a
Avoid breathing dust/fume/gas/mist/vapours/spray.Wear eye/face protection.IF IN EYES: Rinse cautiously with water for several minutes. Remove contact lenses, if present and easy to do. Continue rinsing.IF INHALED: Remove to fresh air and keep at rest in a position comfortable for breathing.Store locked up.Dispose of contents/container in accordance with local/regional/national/international regulations.

安全信息

危险类别
36/37
Irritating to eyes and respiratory system.

安全等级
26-60
In case of contact with eyes, rinse immediately with plenty of water and seek medical advice.This material and its container must be disposed of as hazardous waste

TSCA
是

651494Sigma-AldrichGallium phosphide(single crystal substrate), <111>, diam. × thickness 2 in. × 0.5 mm5528.62元/1 EA;   咨询

产品说明

包装

1 ea in rigid mailer

物理属性

未掺杂的(N 型半导体),载流子浓度 = 2-6×1016cm-3,蚀坑密度 <3×105cm-2,生长技术为液封直拉法
热膨胀:5.3×10-6/℃

外形

立方晶系 (a = 5.4505Å)

基本信息

线性分子式GaP
分子量100.70
EC 号235-057-2
MDL编号MFCD00016109
PubChem化学物质编号24883833
NACRESNA.23

产品性质

质量水平100
形式 (single crystal substrate)
电阻率~0.3 Ω-cm
直径× 厚度2 in. × 0.5 mm
mp1480 ℃
密度4.13 g/mL at 25 ℃
半导体性质<111>
SMILES string[P]#[Ga]
InChI1S/Ga.P
InChI keyHZXMRANICFIONG-UHFFFAOYSA-N

安全信息

象形图GHS07
警示用语:Warning
危险声明H319 - H335
预防措施声明P305 + P351 + P338
危险分类Eye Irrit. 2 - STOT SE 3
靶器官Respiratory system
储存分类代码11 - Combustible Solids
WGKWGK 2
闪点(F)Not applicable
闪点(C)Not applicable
个人防护装备dust mask type N95 (US), Eyeshields, Gloves
521574Sigma-AldrichGallium phosphide99.99% trace metals basis963.37元/2 G;   咨询

基本信息

线性分子式GaP
分子量100.70
EC 号235-057-2
MDL编号MFCD00016109
PubChem化学物质编号24874213
NACRESNA.23

产品性质

测定99.99% trace metals basis
形式chunks
SMILES string[P]#[Ga]
InChI1S/Ga.P
InChI keyHZXMRANICFIONG-UHFFFAOYSA-N

安全信息

象形图GHS07
警示用语:Warning
危险声明H319 - H335
预防措施声明P261 - P264 - P271 - P280 - P304 + P340 + P312 - P305 + P351 + P338
危险分类Eye Irrit. 2 - STOT SE 3
靶器官Respiratory system
储存分类代码11 - Combustible Solids
WGKWGK 2
闪点(F)Not applicable
闪点(C)Not applicable
个人防护装备dust mask type N95 (US), Eyeshields, Gloves
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