| 货号 | 品牌 | 产品名称 | 规格 | 包装、参考价格 | 详情 |
| H811453 | MACKLIN | 氧化铪(IV) | 粉末, 98% | 535元/25g; 1986元/100g; 8866元/500g; | 展开 |
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| H762276 | MACKLIN | 氧化铪(IV) | 99.9% metals basis, D50=200nm | 299元/5g; 1024元/25g; 3044元/100g; | 展开 |
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| H811148 | MACKLIN | 氧化铪(IV) | 99.99% metals basis | 61元/1g; 202元/5g; 735元/25g; 2780元/100g; 11755元/500g; | 展开 |
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| H811551 | MACKLIN | 氧化铪(IV) | 99.9% metals basis | 90元/2g; 336元/10g; 1496元/50g; 7055元/250g; | 展开 |
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| 72-5200 | Strem | Hafnium(IV) oxide | (99.995%-Hf, <0.15% Zr) PURATREM | 1965元/1g; 7425元/5g; | 展开 |
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| 93-7204 | Strem | Hafnium(IV) oxide | 98% | 615元/10g; 2490元/50g; | 展开 |
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| 040270 | Alfa Aesar | Hafnium(IV) oxide | tech. | 4544元/100g; 11339元/500g; | 展开 |
应用
Hafnium(IV) oxide is used in optical coatings and in advanced metal-oxide-semiconductor devices. It is used as a gate insulator in field-effect transistors due to its high dielectric constant. It plays an important role as a possible candidate for resistive-switching memories, as a refractory material in the insulation of devices such as thermocouples and as a high-κ dielectric in DRAM capacitors. It is also used in the preparation of hafnium tetrachloride. 备注
Incompatible with strong oxidizing agents. 基本信息 MDL
MFCD00003565 EINECS
235-013-2 分子式
HfO2 分子量
210.49 熔点
2774° 密度
9.68 灵敏度
Ambient temperatures. 形态
-325 Mesh Powder 溶解性
Insoluble in water. Merck
14,4588 安全信息 TSCA
是 |
| 011835 | Alfa Aesar | Hafnium(IV) oxide | 99% (metals basis excluding Zr), Zr <1.5% | 708元/25g; 3240元/100g; | 展开 |
应用
Hafnium(IV) oxide is used in optical coatings and in advanced metal-oxide-semiconductor devices. It is used as a gate insulator in field-effect transistors due to its high dielectric constant. It plays an important role as a possible candidate for resistive-switching memories, as a refractory material in the insulation of devices such as thermocouples and as a high-κ dielectric in DRAM capacitors. Also, used in the preparation of hafnium tetrachloride. 备注
Incompatible with strong oxidizing agents. 基本信息 MDL
MFCD00003565 EINECS
235-013-2 分子式
HfO2 分子量
210.49 熔点
2774° 密度
9.68 灵敏度
Ambient temperatures. 形态
-325 Mesh Powder 溶解性
Insoluble in water. Merck
14,4588 安全信息 TSCA
是 |
| 036204 | Alfa Aesar | Hafnium(IV) oxide | 99.9% (metals basis excluding Zr), Zr <0.5% | 353元/2g; 780元/10g; 3900元/50g; | 展开 |
应用
Hafnium(IV) oxide is an intermediate. Hafnia is used in optical coatings, and as a high-κ dielectric in DRAM capacitors and in advanced metal-oxide-semiconductor devices. 备注
For vacuum deposition, Monoclinic 基本信息 MDL
MFCD00003565 EINECS
235-013-2 分子式
HfO2 分子量
210.49 熔点
2774° 密度
9.68 灵敏度
Ambient temperatures. 形态
3-12mm Sintered Lump 溶解性
Insoluble in water. Merck
14,4588 安全信息 TSCA
是 |
| 035666 | Alfa Aesar | Hafnium(IV) oxide | 99.95%, (metals basis excluding Zr), Zr typically <0.5% | 575元/1g; 1304元/5g; 3083元/25g; | 展开 |
应用
Hafnium(IV) oxide is used in optical coatings and in advanced metal-oxide-semiconductor devices. It is used as a gate insulator in field-effect transistors due to its high dielectric constant. It plays an important role as a possible candidate for resistive-switching memories, as a refractory material in the insulation of devices such as thermocouples and as a high-κ dielectric in DRAM capacitors. It is also used in the preparation of hafnium tetrachloride. 备注
Incompatible with strong oxidizing agents. 基本信息 MDL
MFCD00003565 EINECS
235-013-2 分子式
HfO2 分子量
210.49 熔点
2774° 密度
9.68 灵敏度
Ambient temperatures. 形态
-325 Mesh Powder 溶解性
Insoluble in water. Merck
14,4588 安全信息 TSCA
是 |
| 203394 | Sigma-Aldrich | Hafnium(IV) oxide | ≥99.95% | 1346.63元/1 G; | 展开 |
基本信息 | 经验(实验)分子式 | HfO2 | | 分子量 | 210.49 | | EC 号 | 235-013-2 | | MDL编号 | MFCD00003565 | | PubChem化学物质编号 | 24852168 | | NACRES | NA.23 |
产品性质 | 质量水平 | 100 | | 测定 | ≥99.95% | | 形式 | powder | | 密度 | 9.68 g/mL at 25 ℃ (lit.) | | SMILES string | O=[Hf]=O | | InChI | 1S/Hf.2O | | InChI key | CJNBYAVZURUTKZ-UHFFFAOYSA-N |
安全信息 | 储存分类代码 | 13 - Non Combustible Solids | | WGK | WGK 3 | | 闪点(F) | Not applicable | | 闪点(C) | Not applicable | | 个人防护装备 | Eyeshields, Gloves, type N95 (US) |
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| 202118 | Sigma-Aldrich | Hafnium(IV) oxide | powder, 98% | 730.8元/25 G; 1940.45元/100 G; | 展开 |
基本信息 | 经验(实验)分子式 | HfO2 | | 分子量 | 210.49 | | EC 号 | 235-013-2 | | MDL编号 | MFCD00003565 | | PubChem化学物质编号 | 24852038 | | NACRES | NA.23 |
产品性质 | 质量水平 | 100 | | 测定 | 98% | | 形式 | powder | | 密度 | 9.68 g/mL at 25 ℃ (lit.) | | SMILES string | O=[Hf]=O | | InChI | 1S/Hf.2O | | InChI key | CJNBYAVZURUTKZ-UHFFFAOYSA-N |
安全信息 | 储存分类代码 | 13 - Non Combustible Solids | | WGK | WGK 3 | | 闪点(F) | Not applicable | | 闪点(C) | Not applicable | | 个人防护装备 | Eyeshields, Gloves, type N95 (US) |
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| 769398 | Sigma-Aldrich | Hafnium(IV) oxide | pellets, diam. × thickness 9 mm × 4.2 mm | 1452.42元/25 G; | 展开 |
产品说明 应用 High dielectric constant of hafnia makes it suitable for application in metal oxide based semiconductor devices. It also finds applications as optical coating materials. 基本信息 | 经验(实验)分子式 | HfO2 | | 分子量 | 210.49 | | EC 号 | 235-013-2 | | MDL编号 | MFCD00003565 | | NACRES | NA.23 |
产品性质 | 质量水平 | 100 | | 形式 | pellets | | 直径× 厚度 | 9 mm × 4.2 mm | | 杂质 | ≤0.1% PBB (polybrominated biphenyls)
≤0.1% PBDE (polybrominated diphenyl ethers) | | 密度 | 9.68 g/mL at 25 ℃ (lit.) | | 痕量阳离子 | Cd: ≤0.01%
Co: ≤0.0005%
Cr: ≤0.005%
Cu: ≤0.0005%
Fe: ≤0.005%
Hg: ≤0.1%
Pb: ≤0.1%
Ti: ≤0.005%
V: ≤0.005%
Zr: ≤1.0% | | SMILES string | O=[Hf]=O | | InChI | 1S/Hf.2O | | InChI key | CJNBYAVZURUTKZ-UHFFFAOYSA-N |
安全信息 | 储存分类代码 | 13 - Non Combustible Solids | | WGK | WGK 3 | | 闪点(F) | Not applicable | | 闪点(C) | Not applicable |
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| 099766 | Fluorochem | Hafnium oxide | | 330元/100mg; | 展开 |
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