应用
Tantalum nitride is used to create barrier or "glue" layers between copper, or other conductive metals, and dielectric insulator films such as thermal oxides. These films are deposited on top of silicon wafers during the manufacture of integrated circuits, to create thin film surface mount resistors and has other electronic applications.

备注
Stable under recommended storage conditions. Incompatible with oxidizing agents.

基本信息

MDL
MFCD00049568

EINECS
234-788-4

分子式
TaN

分子量
194.95

熔点
3360°

灵敏度
Ambient temperatures.

形态
-325 Mesh Powder

溶解性
Insoluble in water.

安全信息

TSCA
是